APT17F80S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT17F80S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 500 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 374 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm
Encapsulados: D3PAK
Búsqueda de reemplazo de APT17F80S MOSFET
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APT17F80S datasheet
apt17f80b apt17f80s.pdf
APT17F80B APT17F80S 800V, 18A, 0.58 Max, trr 250ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAK MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti- mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt17f80b.pdf
isc N-Channel MOSFET Transistor APT17F80B FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt17f120j.pdf
APT17F120J 1200V, 18A, 0.58 Max, trr 330ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig
apt17f100b apt17f100s.pdf
APT17F100B APT17F100S 1000V, 17A, 0.78 Max, trr 245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.
Otros transistores... APT15F50K, APT15F50KF, APT15F60B, APT15F60S, APT17F100B, APT17F100S, APT17F120J, APT17F80B, 60N06, APT17M120JCU2, APT17M120JCU3, APT17N80BC3G, APT17N80SC3G, APT18F60B, APT18F60S, APT18M100B, APT18M100S
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