APT17M120JCU2 Todos los transistores

 ..1. Size:107K  microsemi
 apt17m120jcu2.pdf

APT17M120JCU2 VDSS = 1200V ISOTOP Boost chopper RDSon = 680m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 17A @ Tc = 25 C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

 2.1. Size:107K  microsemi
 apt17m120jcu3.pdf

APT17M120JCU3 VDSS = 1200V ISOTOP Buck chopper RDSon = 680m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 17A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

 9.1. Size:163K  apt
 apt17n80bc3g apt17n80sc3g.pdf

APT17N80BC3 APT17N80SC3 800V 17A 0.290 D3PAK Super Junction MOSFET TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) D Low Miller Capacitance Ultra Low Gate Charge, Qg G Avalanche Energy Rated S TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT17N80BC3_SC

 9.2. Size:171K  apt
 apt17n80sc3.pdf

APT17N80BC3 APT17N80SC3 800V 17A 0.290 D3PAK Super Junction MOSFET TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) D Low Miller Capacitance Ultra Low Gate Charge, Qg G Avalanche Energy Rated S TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT17N80BC3_SC

 9.3. Size:171K  apt
 apt17n80bc3.pdf

APT17N80BC3 APT17N80SC3 800V 17A 0.290 D3PAK Super Junction MOSFET TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) D Low Miller Capacitance Ultra Low Gate Charge, Qg G Avalanche Energy Rated S TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT17N80BC3_SC

 9.4. Size:213K  microsemi
 apt17f120j.pdf

APT17F120J 1200V, 18A, 0.58 Max, trr 330ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig

 9.5. Size:212K  microsemi
 apt17f80b apt17f80s.pdf

APT17F80B APT17F80S 800V, 18A, 0.58 Max, trr 250ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAK MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti- mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 9.6. Size:215K  microsemi
 apt17f100b apt17f100s.pdf

APT17F100B APT17F100S 1000V, 17A, 0.78 Max, trr 245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.

 9.7. Size:432K  bcdsemi
 apt17n apt17z.pdf

Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transis- High Collector-Emitter Voltage 480V tor. Applications The APT17 is available in SOT-23 and TO-92 pack- ages. High Voltage and Low Standby Power Circuit for BCD Solution SOT-23 TO-92(Bulk Packing) TO-92(Ammo Packing) Figure 1. Package Types of APT17

 9.8. Size:375K  inchange semiconductor
 apt17f80b.pdf

isc N-Channel MOSFET Transistor APT17F80B FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp