APT17M120JCU3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT17M120JCU3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 480 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 615 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.816 Ohm
Paquete / Cubierta: SOT-227
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APT17M120JCU3 Datasheet (PDF)
apt17m120jcu3.pdf
APT17M120JCU3VDSS = 1200V ISOTOP Buck chopper RDSon = 680m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 17A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott
apt17m120jcu2.pdf
APT17M120JCU2VDSS = 1200V ISOTOP Boost chopper RDSon = 680m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 17A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat
apt17n80bc3g apt17n80sc3g.pdf
APT17N80BC3APT17N80SC3800V 17A 0.290D3PAKSuper Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON)D Low Miller Capacitance Ultra Low Gate Charge, QgG Avalanche Energy RatedS TO-247 or Surface Mount D3PAK PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol ParameterAPT17N80BC3_SC
apt17n80sc3.pdf
APT17N80BC3APT17N80SC3800V 17A 0.290D3PAKSuper Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON)D Low Miller Capacitance Ultra Low Gate Charge, QgG Avalanche Energy RatedS TO-247 or Surface Mount D3PAK PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol ParameterAPT17N80BC3_SC
apt17n80bc3.pdf
APT17N80BC3APT17N80SC3800V 17A 0.290D3PAKSuper Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON)D Low Miller Capacitance Ultra Low Gate Charge, QgG Avalanche Energy RatedS TO-247 or Surface Mount D3PAK PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol ParameterAPT17N80BC3_SC
apt17f120j.pdf
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apt17f80b apt17f80s.pdf
APT17F80B APT17F80S 800V, 18A, 0.58 Max, trr 250nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt17f100b apt17f100s.pdf
APT17F100B APT17F100S 1000V, 17A, 0.78 Max, trr 245nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.
apt17n apt17z.pdf
Data SheetHIGH VOLTAGE NPN TRANSISTOR APT17General Description FeaturesThe APT17 is high voltage, small signal NPN transis- High Collector-Emitter Voltage: 480Vtor. ApplicationsThe APT17 is available in SOT-23 and TO-92 pack-ages. High Voltage and Low Standby Power Circuit forBCD Solution SOT-23 TO-92(Bulk Packing) TO-92(Ammo Packing)Figure 1. Package Types of APT17
apt17f80b.pdf
isc N-Channel MOSFET Transistor APT17F80BFEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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