APT19M120J MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT19M120J

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 545 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 715 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm

Encapsulados: SOT-227

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APT19M120J datasheet

 ..1. Size:122K  microsemi
 apt19m120j.pdf pdf_icon

APT19M120J

APT19M120J 1200V, 19A, 0.53 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon

 9.1. Size:213K  microsemi
 apt19f100j.pdf pdf_icon

APT19M120J

APT19F100J 1000V, 20A, 0.44 Max, trr 290ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

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