APT19M120J Todos los transistores

 

APT19M120J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT19M120J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 545 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 715 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm
   Paquete / Cubierta: SOT-227
 

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APT19M120J Datasheet (PDF)

 ..1. Size:122K  microsemi
 apt19m120j.pdf pdf_icon

APT19M120J

APT19M120J 1200V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

 9.1. Size:213K  microsemi
 apt19f100j.pdf pdf_icon

APT19M120J

APT19F100J 1000V, 20A, 0.44 Max, trr 290nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

Otros transistores... APT17N80SC3G , APT18F60B , APT18F60S , APT18M100B , APT18M100S , APT18M80B , APT18M80S , APT19F100J , IRF640 , APT20F50B , APT20F50S , APT20M11JFLL , APT20M11JLL , APT20M120JCU2 , APT20M120JCU3 , APT20M16B2FLLG , APT20M16B2LLG .

History: SVG105R4NSTR | HGW105N15SL | ZXMN6A11G | SHD218602B | HUFA75345S3S | SVF7N60F | CED6186

 

 
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