APT19M120J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT19M120J
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 545 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 715 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm
Paquete / Cubierta: SOT-227
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APT19M120J Datasheet (PDF)
apt19m120j.pdf

APT19M120J 1200V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon
apt19f100j.pdf

APT19F100J 1000V, 20A, 0.44 Max, trr 290nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi
Otros transistores... APT17N80SC3G , APT18F60B , APT18F60S , APT18M100B , APT18M100S , APT18M80B , APT18M80S , APT19F100J , IRF640 , APT20F50B , APT20F50S , APT20M11JFLL , APT20M11JLL , APT20M120JCU2 , APT20M120JCU3 , APT20M16B2FLLG , APT20M16B2LLG .
History: AP05N50EH-HF | LNC045R090 | AP3700MT | TPP60R350C | HUFA75345S3S | 2SJ188 | S85N16R
History: AP05N50EH-HF | LNC045R090 | AP3700MT | TPP60R350C | HUFA75345S3S | 2SJ188 | S85N16R



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