APT20M18LVFRG Todos los transistores

 

APT20M18LVFRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT20M18LVFRG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 2320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TO-264

 Búsqueda de reemplazo de APT20M18LVFRG MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT20M18LVFRG datasheet

 ..1. Size:152K  apt
 apt20m18b2vfrg apt20m18lvfrg.pdf pdf_icon

APT20M18LVFRG

APT20M18B2VFR A20M18LVFR 200V 100A 0.018 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 2.1. Size:255K  inchange semiconductor
 apt20m18lvfr.pdf pdf_icon

APT20M18LVFRG

isc N-Channel MOSFET Transistor APT20M18LVFR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.018 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.1. Size:159K  apt
 apt20m18b2vrg apt20m18lvrg.pdf pdf_icon

APT20M18LVFRG

APT20M18B2VR A20M18LVR 200V 100A 0.018 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LV

 4.2. Size:255K  inchange semiconductor
 apt20m18lvr.pdf pdf_icon

APT20M18LVFRG

isc N-Channel MOSFET Transistor APT20M18LVR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.018 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

MOSTRAR MÁS

Otros transistores... APT20M120JCU2 , APT20M120JCU3 , APT20M16B2FLLG , APT20M16B2LLG , APT20M16LFLLG , APT20M16LLLG , APT20M18B2VFRG , APT20M18B2VRG , IRFB4115 , APT20M18LVRG , APT20M20B2FLLG , APT20M20B2LLG , APT20M20LFLLG , APT20M20LLLG , APT20M34BFLLG , APT20M34BLLG , APT20M34SFLLG .

 

 

 


 
↑ Back to Top
.