APT20M18LVRG Todos los transistores

 

APT20M18LVRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT20M18LVRG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 625 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 330 nC

Tiempo de elevación (tr): 27 nS

Conductancia de drenaje-sustrato (Cd): 2320 pF

Resistencia drenaje-fuente RDS(on): 0.018 Ohm

Empaquetado / Estuche: TO-264

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APT20M18LVRG Datasheet (PDF)

1.1. apt20m18b2vrg apt20m18lvrg.pdf Size:159K _update_mosfet

APT20M18LVRG
APT20M18LVRG

APT20M18B2VR A20M18LVR Ω 200V 100A 0.018Ω Ω Ω Ω B2VR POWER MOS V® MOSFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LV

1.2. apt20m18b2vfrg apt20m18lvfrg.pdf Size:152K _update_mosfet

APT20M18LVRG
APT20M18LVRG

APT20M18B2VFR A20M18LVFR Ω 200V 100A 0.018Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

 2.1. apt20m18b2vr.pdf Size:38K _apt

APT20M18LVRG
APT20M18LVRG

APT20M18B2VR APT20M18LVR 200V 100A 0.018W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificati

2.2. apt20m18b2vfr.pdf Size:39K _apt

APT20M18LVRG
APT20M18LVRG

APT20M18B2VFR APT20M18LVFR 200V 100A 0.018W B2VFR POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVFR • Identical

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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