APT20M18LVRG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT20M18LVRG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 2320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TO-264

  📄📄 Copiar 

 Búsqueda de reemplazo de APT20M18LVRG MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT20M18LVRG datasheet

 ..1. Size:159K  apt
 apt20m18b2vrg apt20m18lvrg.pdf pdf_icon

APT20M18LVRG

APT20M18B2VR A20M18LVR 200V 100A 0.018 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LV

 3.1. Size:255K  inchange semiconductor
 apt20m18lvr.pdf pdf_icon

APT20M18LVRG

isc N-Channel MOSFET Transistor APT20M18LVR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.018 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 4.1. Size:152K  apt
 apt20m18b2vfrg apt20m18lvfrg.pdf pdf_icon

APT20M18LVRG

APT20M18B2VFR A20M18LVFR 200V 100A 0.018 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 4.2. Size:255K  inchange semiconductor
 apt20m18lvfr.pdf pdf_icon

APT20M18LVRG

isc N-Channel MOSFET Transistor APT20M18LVFR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.018 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

MOSTRAR MÁS

Otros transistores... APT20M120JCU3, APT20M16B2FLLG, APT20M16B2LLG, APT20M16LFLLG, APT20M16LLLG, APT20M18B2VFRG, APT20M18B2VRG, APT20M18LVFRG, 2N7000, APT20M20B2FLLG, APT20M20B2LLG, APT20M20LFLLG, APT20M20LLLG, APT20M34BFLLG, APT20M34BLLG, APT20M34SFLLG, APT20M34SLLG