APT20M20LFLLG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT20M20LFLLG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 568 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 2180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO-264

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APT20M20LFLLG datasheet

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APT20M20LFLLG

APT20M20B2FLL APT20M20LFLL 200V 100A 0.020 R FREDFET POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching loss

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APT20M20LFLLG

isc N-Channel MOSFET Transistor APT20M20LFLL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.02 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

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APT20M20LFLLG

APT20M20B2LL APT20M20LLL 200V 100A 0.020 R POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi

 6.1. Size:71K  apt
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APT20M20LFLLG

APT20M20B2FLL APT20M20LFLL 200V 100A 0.020W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti

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