RF1S40N10LESM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S40N10LESM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VRds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TO263AB
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RF1S40N10LESM Datasheet (PDF)
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Otros transistores... RF1K49221 , RF1K49223 , RF1K49224 , RF1S22N10SM , RF1S25N06SM , RF1S30N06LESM , RF1S30P05SM , RF1S30P06SM , K2611 , RF1S40N10SM , RF1S45N06LESM , RF1S45N06SM , RF1S4N100SM , RF1S50N06LESM , RF1S50N06SM , RF1S530SM , RF1S540SM .
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