RF1S40N10LESM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S40N10LESM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Corriente continua de drenaje |Id|: 40 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
Paquete / Cubierta: TO263AB
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RF1S40N10LESM Datasheet (PDF)
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RFG40N10LE, RFP40N10LE, RF1S40N10LESMData Sheet October 1999 File Number 4061.540A, 100V, 0.040 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 40A, 100VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesappr
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RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti
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RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti
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RFP4N100, RF1S4N100SMData Sheet January 20024.3A, 1000V, 3.500 Ohm, High Voltage, FeaturesN-Channel Power MOSFETs 4.3A, 1000VThe RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse)transistors. They are designed for use in applications such as switching regulators, switching conver
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RFP45N06LE, RF1S45N06LESMData Sheet October 1999 File Number 4076.245A, 60V, 0.028 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 45A, 60VThese are N-Channel enhancement mode power MOSFETs rDS(ON) = 0.028manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproaching those
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