APT20M34SLLG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT20M34SLLG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 403 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 74 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 60 nC
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 1170 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
Paquete / Cubierta: D3PAK
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APT20M34SLLG Datasheet (PDF)
apt20m34bllg apt20m34sllg.pdf
APT20M34BLLAPT20M34SLL200V 74A 0.034R POWER MOS 7 MOSFETBLLD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalo
apt20m34bfllg apt20m34sfllg.pdf
APT20M34BFLLAPT20M34SFLL200V 74A 0.034BFLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL
apt20m34bll.pdf
APT20M34BLLAPT20M34SLL200V 74A 0.034WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin
apt20m34bfll.pdf
APT20M34BFLLAPT20M34SFLL200V 74A 0.034WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally f
apt20m34bll.pdf
isc N-Channel MOSFET Transistor APT20M34BLLFEATURESDrain Current I =74A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.034(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt20m34bfll.pdf
isc N-Channel MOSFET Transistor APT20M34BFLLFEATURESDrain Current I = 74A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.034(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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