APT20M36BFLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT20M36BFLLG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 329 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37 nS
Cossⓘ - Capacitancia de salida: 990 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de MOSFET APT20M36BFLLG
Principales características: APT20M36BFLLG
apt20m36bfllg apt20m36sfllg.pdf
APT20M36BFLL APT20M36SFLL 200V 65A 0.036 R POWER MOS 7 FREDFET BFLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching D3PAK losses are addressed with Power MOS 7 by significantly lowering RDS(ON) TO-247 and Qg. Power MOS 7 combines lower conduction and switching losses alon
apt20m36bfll.pdf
APT20M36BFLL APT20M36SFLL 200V 65A 0.036W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally f
apt20m36bfll.pdf
isc N-Channel MOSFET Transistor APT20M36BFLL FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V
apt20m36bll.pdf
APT20M36BLL APT20M36SLL 200V 65A 0.036W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switchin
Otros transistores... APT20M20B2FLLG , APT20M20B2LLG , APT20M20LFLLG , APT20M20LLLG , APT20M34BFLLG , APT20M34BLLG , APT20M34SFLLG , APT20M34SLLG , STP75NF75 , APT20M36SFLLG , APT20M38SVFRG , APT20M40HVR , APT21M100J , APT22F100J , APT22F120B2 , APT22F120L , APT22F80B .
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