APT22F100J Todos los transistores

 

APT22F100J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT22F100J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 545 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 825 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: SOT-227
 

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APT22F100J Datasheet (PDF)

 ..1. Size:199K  microsemi
apt22f100j.pdf pdf_icon

APT22F100J

APT22F100J 1000V, 23A, 0.38 Max, trr 300nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

 7.1. Size:211K  microsemi
apt22f120b2 apt22f120l.pdf pdf_icon

APT22F100J

APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270nsN-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

 8.1. Size:221K  microsemi
apt22f80b apt22f80s.pdf pdf_icon

APT22F100J

APT22F80B APT22F80S 800V, 23A, 0.43 Max, trr 260nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 8.2. Size:375K  inchange semiconductor
apt22f80b.pdf pdf_icon

APT22F100J

isc N-Channel MOSFET Transistor APT22F80BFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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History: SSW60R130S2 | IPA086N10N3G | IPD110N12N3 | QM3008K | SE8090A | STD60NH03L-1 | 2SK2423

 

 
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