APT22F100J MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT22F100J

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 545 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 825 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: SOT-227

 Búsqueda de reemplazo de APT22F100J MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT22F100J datasheet

 ..1. Size:199K  microsemi
 apt22f100j.pdf pdf_icon

APT22F100J

APT22F100J 1000V, 23A, 0.38 Max, trr 300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

 7.1. Size:211K  microsemi
 apt22f120b2 apt22f120l.pdf pdf_icon

APT22F100J

APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

 8.1. Size:221K  microsemi
 apt22f80b apt22f80s.pdf pdf_icon

APT22F100J

APT22F80B APT22F80S 800V, 23A, 0.43 Max, trr 260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 8.2. Size:375K  inchange semiconductor
 apt22f80b.pdf pdf_icon

APT22F100J

isc N-Channel MOSFET Transistor APT22F80B FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

MOSTRAR MÁS

Otros transistores... APT20M34BLLG, APT20M34SFLLG, APT20M34SLLG, APT20M36BFLLG, APT20M36SFLLG, APT20M38SVFRG, APT20M40HVR, APT21M100J, AO3401, APT22F120B2, APT22F120L, APT22F80B, APT22F80S, APT22M100JCU2, APT22M100JCU3, APT23F60B, APT23F60S