APT22M100JCU3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT22M100JCU3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 463 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 260 nC
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 700 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
Paquete / Cubierta: SOT-227
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APT22M100JCU3 Datasheet (PDF)
apt22m100jcu3.pdf
APT22M100JCU3VDSS = 1000V ISOTOP Buck chopper RDSon = 400m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 22A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott
apt22m100jcu2.pdf
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apt22f100j.pdf
APT22F100J 1000V, 23A, 0.38 Max, trr 300nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi
apt22f80b.pdf
isc N-Channel MOSFET Transistor APT22F80BFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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