APT22M100JCU3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APT22M100JCU3VDSS = 1000V ISOTOP Buck chopper RDSon = 400m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 22A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

APT22M100JCU2VDSS = 1000V ISOTOP Boost chopper RDSon = 400m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 22A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

APT22F80B APT22F80S 800V, 23A, 0.43 Max, trr 260nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270nsN-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

APT22F100J 1000V, 23A, 0.38 Max, trr 300nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

isc N-Channel MOSFET Transistor APT22F80BFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp