APT24M120L Todos los transistores

 

APT24M120L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT24M120L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1040 W
   Voltaje máximo drenador - fuente |Vds|: 1200 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 24 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 260 nC
   Tiempo de subida (tr): 27 nS
   Conductancia de drenaje-sustrato (Cd): 615 pF
   Resistencia entre drenaje y fuente RDS(on): 0.63 Ohm
   Paquete / Cubierta: TO-264

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APT24M120L Datasheet (PDF)

 ..1. Size:207K  microsemi
apt24m120b2 apt24m120l.pdf

APT24M120L APT24M120L

APT24M120B2 APT24M120L 1200V, 24A, 0.63 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

 8.1. Size:220K  microsemi
apt24m80b apt24m80s.pdf

APT24M120L APT24M120L

APT24M80B APT24M80S 800V, 25A, 0.39 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

 8.2. Size:376K  inchange semiconductor
apt24m80b.pdf

APT24M120L APT24M120L

isc N-Channel MOSFET Transistor APT24M80BFEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:213K  microsemi
apt24f50b apt24f50s.pdf

APT24M120L APT24M120L

APT24F50B APT24F50S 500V, 24A, 0.24 Max, trr 210nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 9.2. Size:375K  inchange semiconductor
apt24f50b.pdf

APT24M120L APT24M120L

isc N-Channel MOSFET Transistor APT24F50BFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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