APT24M120L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT24M120L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1040 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 615 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.63 Ohm
Encapsulados: TO-264
Búsqueda de reemplazo de APT24M120L MOSFET
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APT24M120L datasheet
apt24m120b2 apt24m120l.pdf
APT24M120B2 APT24M120L 1200V, 24A, 0.63 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and
apt24m80b apt24m80s.pdf
APT24M80B APT24M80S 800V, 25A, 0.39 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of
apt24m80b.pdf
isc N-Channel MOSFET Transistor APT24M80B FEATURES Drain Current I =25A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.39 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
apt24f50b apt24f50s.pdf
APT24F50B APT24F50S 500V, 24A, 0.24 Max, trr 210ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
Otros transistores... APT22F80S, APT22M100JCU2, APT22M100JCU3, APT23F60B, APT23F60S, APT24F50B, APT24F50S, APT24M120B2, IRFB3607, APT24M80B, APT24M80S, APT25M100J, APT26F120B2, APT26F120L, APT26M100JCU2, APT26M100JCU3, APT28F60B
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