RF1S45N06LESM Todos los transistores

 

RF1S45N06LESM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RF1S45N06LESM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 142 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Corriente continua de drenaje |Id|: 45 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
   Paquete / Cubierta: TO263AB

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RF1S45N06LESM Datasheet (PDF)

 ..2. Size:202K  intersil
rfp45n06le rf1s45n06lesm.pdf

RF1S45N06LESM RF1S45N06LESM

RFP45N06LE, RF1S45N06LESMData Sheet October 1999 File Number 4076.245A, 60V, 0.028 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 45A, 60VThese are N-Channel enhancement mode power MOSFETs rDS(ON) = 0.028manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproaching those

 5.1. Size:372K  fairchild semi
rfg45n06 rfp45n06 rf1s45n06sm.pdf

RF1S45N06LESM RF1S45N06LESM

RFG45N06, RFP45N06, RF1S45N06SMData Sheet January 200245A, 60V, 0.028 Ohm, N-Channel Power FeaturesMOSFETs 45A, 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.028power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

 9.1. Size:368K  fairchild semi
rf1s40n10.pdf

RF1S45N06LESM RF1S45N06LESM

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

 9.2. Size:369K  fairchild semi
rfg40n10 rfp40n10 rf1s40n10-sm.pdf

RF1S45N06LESM RF1S45N06LESM

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

 9.3. Size:93K  fairchild semi
rfp4n100 rf1s4n100sm.pdf

RF1S45N06LESM RF1S45N06LESM

RFP4N100, RF1S4N100SMData Sheet January 20024.3A, 1000V, 3.500 Ohm, High Voltage, FeaturesN-Channel Power MOSFETs 4.3A, 1000VThe RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse)transistors. They are designed for use in applications such as switching regulators, switching conver

 9.4. Size:410K  intersil
rfg40n10le rfp40n10le rf1s40n10lesm.pdf

RF1S45N06LESM RF1S45N06LESM

RFG40N10LE, RFP40N10LE, RF1S40N10LESMData Sheet October 1999 File Number 4061.540A, 100V, 0.040 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 40A, 100VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesappr

Otros transistores... RF1K49224 , RF1S22N10SM , RF1S25N06SM , RF1S30N06LESM , RF1S30P05SM , RF1S30P06SM , RF1S40N10LESM , RF1S40N10SM , IRFZ46N , RF1S45N06SM , RF1S4N100SM , RF1S50N06LESM , RF1S50N06SM , RF1S530SM , RF1S540SM , RF1S60P03SM , RF1S630SM .

 

 
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