APT30M40B2VRG Todos los transistores

 

APT30M40B2VRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT30M40B2VRG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 520 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 1500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-247
 

 Búsqueda de reemplazo de APT30M40B2VRG MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT30M40B2VRG Datasheet (PDF)

 ..1. Size:88K  apt
 apt30m40b2vrg.pdf pdf_icon

APT30M40B2VRG

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

 2.1. Size:116K  apt
 apt30m40b2vr.pdf pdf_icon

APT30M40B2VRG

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

 3.1. Size:116K  apt
 apt30m40b2vfrg.pdf pdf_icon

APT30M40B2VRG

APT30M40B2VFRAPT30M40LVFR300V 76A 0.040B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

 6.1. Size:70K  apt
 apt30m40jvr.pdf pdf_icon

APT30M40B2VRG

APT30M40JVR300V 70A 0.040POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalanc

MOSTRAR MÁS

Otros transistores... APT30M17JFLL , APT30M30B2FLLG , APT30M30B2LLG , APT30M30JFLL , APT30M30LFLL , APT30M30LLLG , APT30M36JFLL , APT30M40B2VFRG , IRF830 , APT30M60J , APT30M61BFLLG , APT30M61SFLLG , APT30M75BFLLG , APT30M75BLLG , APT30M75SFLLG , APT30M75SLLG , APT30M85SVRG .

History: BL20N60-A | STL56N3LLH5 | IPD035N06L3G | DMN53D0LV

 

 
Back to Top

 


 
.