APT30M75BLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT30M75BLLG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 329 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 44 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 771 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Encapsulados: TO-247
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APT30M75BLLG datasheet
apt30m75bllg apt30m75sllg.pdf
APT30M75BLL APT30M75SLL 300V 44A 0.075 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL alo
apt30m75bll.pdf
APT30M75BLL APT30M75SLL 300V 44A 0.075W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switchin
apt30m75bll.pdf
isc N-Channel MOSFET Transistor APT30M75BLL FEATURES Drain Current I =44A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
apt30m75bfllg apt30m75sfllg.pdf
APT30M75BFLL APT30M75SFLL 300V 44A 0.075 BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
Otros transistores... APT30M30LLLG, APT30M36JFLL, APT30M40B2VFRG, APT30M40B2VRG, APT30M60J, APT30M61BFLLG, APT30M61SFLLG, APT30M75BFLLG, IRFB31N20D, APT30M75SFLLG, APT30M75SLLG, APT30M85SVRG, APT30N60BC6, APT30N60KC6, APT30N60SC6, APT31M100B2, APT31M100L
History: APT30M60J
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