RF1S50N06LESM Todos los transistores

 

RF1S50N06LESM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RF1S50N06LESM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 142 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Corriente continua de drenaje |Id|: 50 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
   Paquete / Cubierta: TO263AB

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RF1S50N06LESM Datasheet (PDF)

 ..1. Size:154K  intersil
rfg50n06le rfp50n06le rf1s50n06lesm.pdf

RF1S50N06LESM RF1S50N06LESM

RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa

 5.1. Size:373K  fairchild semi
rfg50n06 rfp50n06 rf1s50n06sm.pdf

RF1S50N06LESM RF1S50N06LESM

RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico

 9.1. Size:112K  fairchild semi
irf540 rf1s540sm.pdf

RF1S50N06LESM RF1S50N06LESM

IRF540, RF1S540SMData Sheet January 200228A, 100V, 0.077 Ohm, N-Channel Power FeaturesMOSFETs 28A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.077power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

 9.2. Size:52K  harris semi
rf1s540.pdf

RF1S50N06LESM RF1S50N06LESM

IRF540, IRF541, IRF542,SemiconductorIRF543, RF1S540, RF1S540SM25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,N-Channel Power MOSFETsNovember 1997Features Description 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.077 and 0.100MOSFETs designed, tested, and guaranteed to

 9.3. Size:74K  intersil
irf530 rf1s530sm.pdf

RF1S50N06LESM RF1S50N06LESM

IRF530, RF1S530SMData Sheet November 1999 File Number 1575.614A, 100V, 0.160 Ohm, N-Channel Power FeaturesMOSFETs 14A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.160power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in th

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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