APT32M80J MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT32M80J

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 543 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 76 nS

Cossⓘ - Capacitancia de salida: 927 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: SOT-227

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APT32M80J datasheet

 ..1. Size:180K  microsemi
apt32m80j.pdf pdf_icon

APT32M80J

APT32M80J 800V, 33A, 0.19 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon gat

 9.1. Size:83K  apt
apt32gu30b.pdf pdf_icon

APT32M80J

APT32GU30B 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss SSOA rated C Low Gate Charge G Ultrafast Tai

 9.2. Size:214K  microsemi
apt32f120j.pdf pdf_icon

APT32M80J

APT32F120J 1200V, 33A, 0.32 Max, trr 430ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

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