APT32M80J Todos los transistores

 

APT32M80J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT32M80J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 543 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 303 nC
   trⓘ - Tiempo de subida: 76 nS
   Cossⓘ - Capacitancia de salida: 927 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: SOT-227

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APT32M80J Datasheet (PDF)

 ..1. Size:180K  microsemi
apt32m80j.pdf

APT32M80J
APT32M80J

APT32M80J 800V, 33A, 0.19 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon gat

 9.1. Size:83K  apt
apt32gu30b.pdf

APT32M80J
APT32M80J

APT32GU30B300V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA ratedC Low Gate ChargeG Ultrafast Tai

 9.2. Size:214K  microsemi
apt32f120j.pdf

APT32M80J
APT32M80J

APT32F120J 1200V, 33A, 0.32 Max, trr 430nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

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