2SK1271 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1271
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 240 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 125 nC
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MOSFET 2SK1271
2SK1271 Datasheet (PDF)
2sk1279.pdf
N-channel MOS-FET2SK1279F-V Series 500V 0,58 15A 125W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500
2sk1278.pdf
N-channel MOS-FET2SK1278F-V Series 500V 1,1 10A 100W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500 V
2sk1277.pdf
N-channel MOS-FET2SK1277F-V Series 250V 0,12 30A 150W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 250
2sk1273.pdf
SMD Type MOSFETN-Channel MOSFET2SK12731.70 0.1 Features VDS (V) = 60V ID = 2 A 0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 0.65 (VGS = 10V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 2A Pulse
2sk1279.pdf
isc N-Channel MOSFET Transistor 2SK1279DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
2sk1278.pdf
isc N-Channel MOSFET Transistor 2SK1278DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
2sk1277.pdf
isc N-Channel MOSFET Transistor 2SK1277DESCRIPTIONDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V =0)
Otros transistores... 2SK1187 , 2SK1188 , 2SK1189 , 2SK1190 , 2SK1191 , 2SK1192 , 2SK1198 , 2SK1221 , 20N50 , 2SK1272 , 2SK1273 , 2SK1274 , 2SK1282 , 2SK1283 , 2SK1284 , 2SK1285 , 2SK1286 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918