APT37F50B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT37F50B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 37 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 615 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO-247

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APT37F50B datasheet

 ..1. Size:214K  microsemi
 apt37f50b apt37f50s.pdf pdf_icon

APT37F50B

APT37F50B APT37F50S 500V, 37A, 0.15 Max, trr, 250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. L

 ..2. Size:375K  inchange semiconductor
 apt37f50b.pdf pdf_icon

APT37F50B

isc N-Channel MOSFET Transistor APT37F50B FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:210K  microsemi
 apt37m100b2 apt37m100l.pdf pdf_icon

APT37F50B

APT37M100B2 APT37M100L 1000V, 37A, 0.33 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and

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