APT40M70JVFR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT40M70JVFR 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 450 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 1140 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Encapsulados: SOT-227
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APT40M70JVFR datasheet
apt40m70jvfr.pdf
APT40M70JVFR 400V 53A 0.070 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Faster
apt40m70jvr.pdf
APT40M70JVR 400V 53A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche
apt40m70lvr.pdf
APT40M70LVR 400V 57A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe
apt40m70b2vfrg apt40m70lvfrg.pdf
400V 57A 0.070 APT40M70B2VFR APT40M70LVFR APT40M70B2VFRG* APT40M40LVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance
Otros transistores... APT4016BVFRG, APT4016SVFRG, APT4018BN, APT4020BVFRG, APT4065BN, APT4080BN, APT40M35JVFR, APT40M70B2VFRG, STP75NF75, APT40M70LVFRG, APT40N60B2CF, APT40N60LCF, APT41F100J, APT41M80B2, APT41M80L, APT42F50B, APT42F50S
Parámetros del MOSFET. Cómo se afectan entre sí.
History: PJM2302NSA | BSC105N10LSFG
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