APT40M70JVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT40M70JVFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 450 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 1140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: SOT-227
Búsqueda de reemplazo de APT40M70JVFR MOSFET
APT40M70JVFR Datasheet (PDF)
apt40m70jvfr.pdf

APT40M70JVFR400V 53A 0.070 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faster
apt40m70jvr.pdf

APT40M70JVR400V 53A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche
apt40m70lvr.pdf

APT40M70LVR400V 57A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe
apt40m70b2vfrg apt40m70lvfrg.pdf

400V 57A 0.070APT40M70B2VFR APT40M70LVFRAPT40M70B2VFRG* APT40M40LVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.B2VFR POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance
Otros transistores... APT4016BVFRG , APT4016SVFRG , APT4018BN , APT4020BVFRG , APT4065BN , APT4080BN , APT40M35JVFR , APT40M70B2VFRG , IRFP260 , APT40M70LVFRG , APT40N60B2CF , APT40N60LCF , APT41F100J , APT41M80B2 , APT41M80L , APT42F50B , APT42F50S .
History: DMN4031SSD | QM6007K | AP9938GEY-HF | 2301L | BL30N60-W | 2SK2616 | SVS11N60TD2
History: DMN4031SSD | QM6007K | AP9938GEY-HF | 2301L | BL30N60-W | 2SK2616 | SVS11N60TD2



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
2sc3181 | 2sb324 | 2sc1904 | 2sc281 | m28s transistor | 2n3640 | tta1943 transistor | fb4410z