APT40M70JVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT40M70JVFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 450 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 1140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: SOT-227
Búsqueda de reemplazo de APT40M70JVFR MOSFET
APT40M70JVFR datasheet
apt40m70jvfr.pdf
APT40M70JVFR 400V 53A 0.070 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Faster
apt40m70jvr.pdf
APT40M70JVR 400V 53A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche
apt40m70lvr.pdf
APT40M70LVR 400V 57A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe
apt40m70b2vfrg apt40m70lvfrg.pdf
400V 57A 0.070 APT40M70B2VFR APT40M70LVFR APT40M70B2VFRG* APT40M40LVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance
Otros transistores... APT4016BVFRG , APT4016SVFRG , APT4018BN , APT4020BVFRG , APT4065BN , APT4080BN , APT40M35JVFR , APT40M70B2VFRG , 2SK3878 , APT40M70LVFRG , APT40N60B2CF , APT40N60LCF , APT41F100J , APT41M80B2 , APT41M80L , APT42F50B , APT42F50S .
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