RF1S640SM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S640SM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO263AB
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RF1S640SM Datasheet (PDF)
irf640 rf1s640 rf1s640sm.pdf
IRF640, RF1S640, RF1S640SMData Sheet January 200218A, 200V, 0.180 Ohm, N-Channel Power FeaturesMOSFETs 18A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.180power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd
irf640 irf641 irf642 irf643 rf1s640.pdf
IRF640, IRF641, IRF642,S E M I C O N D U C T O RIRF643, RF1S640, RF1S640SM16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm,N-Channel Power MOSFETsJanuary 1998Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22MOSFETs designed, tested, and guar
rf1s640.pdf
IRF640, IRF641, IRF642,S E M I C O N D U C T O RIRF643, RF1S640, RF1S640SM16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm,N-Channel Power MOSFETsJanuary 1998Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22MOSFETs designed, tested, and guar
irf630 rf1s630sm.pdf
IRF630, RF1S630SMData Sheet January 20029A, 200V, 0.400 Ohm, N-Channel Power FeaturesMOSFETs 9A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.400power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc
rf1s60p03.pdf
RFG60P03, RFP60P03,S E M I C O N D U C T O RRF1S60P03, RF1S60P03SM60A, 30V, Avalanche Rated, P-ChannelDecember 1995 Enhancement-Mode Power MOSFETsFeatures PackagesJEDEC STYLE TO-247 60A, 30VSOURCE rDS(ON) = 0.027DRAIN Temperature Compensating PSPICE ModelGATEDRAIN Peak Current vs Pulse Width Curve(BOTTOMSIDE METAL) UIS Rating Curve +175oC
Otros transistores... RF1S45N06SM , RF1S4N100SM , RF1S50N06LESM , RF1S50N06SM , RF1S530SM , RF1S540SM , RF1S60P03SM , RF1S630SM , 8205A , RF1S70N03SM , RF1S70N06SM , RF1S9530SM , RF1S9540SM , RF1S9630SM , RF1S9640SM , RFB18N10CS , RFD10P03L .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918