APT47F60J Todos los transistores

 ..1. Size:214K  microsemi
 apt47f60j.pdf

APT47F60J 600V, 49A, 0.09 Max, trr 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the

 9.1. Size:168K  apt
 apt47n60bc3.pdf

APT47N60BC3 APT47N60SC3 600V 47A 0.070 Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT47N60BC3_SC3

 9.2. Size:402K  apt
 apt47n60bcfg.pdf

FINAL DATA SHEET 600V 46A 0.083 APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction FREDFET (B) COOLMOS Power Semiconductors D3PAK Ultra Low RDS(ON) Intrinsic Fast-Recovery Body Diode (S) Low Miller Capacitance Extreme Low Reverse Recovery Charge Ultra Low Gate Charge, Qg Ideal For Z

 9.3. Size:179K  microsemi
 apt47n65bc3g.pdf

APT47N65BC3 600V 47A 0.070 Super Junction MOSFET COOLMOS Power Semiconductors D3 Ultra low RDS(ON) Increased Power Dissipation Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT47N65BC3 UNIT VDSS Drain-So

 9.4. Size:169K  microsemi
 apt47ga60jd40.pdf

APT47GA60JD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity

 9.5. Size:225K  microsemi
 apt47n60bc3g apt47n60sc3g.pdf

APT47N60BC3(G) APT47N60SC3(G) 600V 47A 0.070 Super Junction MOSFET D3PAK Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package. G RoHS Compliant S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT47N60B

 9.6. Size:119K  microsemi
 apt47m60j.pdf

APT47M60J 600V, 49A, 0.09 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

 9.7. Size:376K  inchange semiconductor
 apt47n65bc3.pdf

isc N-Channel MOSFET Transistor APT47N65BC3 FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.07 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.8. Size:376K  inchange semiconductor
 apt47n60bc3.pdf

isc N-Channel MOSFET Transistor APT47N60BC3 FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.07 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp