RF1S70N03SM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RF1S70N03SM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO263AB

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RF1S70N03SM Datasheet (PDF)

..1. Size:142K intersil
rfp70n03 rf1s70n03sm.pdf

RFP70N03, RF1S70N03SMData Sheet July 1999 File Number 3404.470A, 30V, 0.010 Ohm, N-Channel Power FeaturesMOSFETs 70A, 30VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.010the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili

6.1. Size:229K fairchild semi
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf

RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic

6.2. Size:227K fairchild semi
rf1s70n06.pdf

Otros transistores... RF1S4N100SM , RF1S50N06LESM , RF1S50N06SM , RF1S530SM , RF1S540SM , RF1S60P03SM , RF1S630SM , RF1S640SM , MMIS60R580P , RF1S70N06SM , RF1S9530SM , RF1S9540SM , RF1S9630SM , RF1S9640SM , RFB18N10CS , RFD10P03L , RFD10P03LSM .

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