APT4F120K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT4F120K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 225 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.4 nS
Cossⓘ - Capacitancia de salida: 100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de APT4F120K MOSFET
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APT4F120K datasheet
apt4f120k.pdf
APT4F120K 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220 This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge
apt4f120s.pdf
APT4F120S 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, h
Otros transistores... APT47F60J , APT47M60J , APT47N60BC3G , APT47N60BCFG , APT47N60SC3G , APT47N65BC3G , APT48M80B2 , APT48M80L , IRFP450 , APT4F120S , APT4M120K , APT5010B2FLLG , APT5010B2LLG , APT5010LFLLG , APT5010LLLG , APT5012JN , APT5014B2VFRG .
History: IPP052N06L3
History: IPP052N06L3
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