2SK2518-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

N-channel MOS-FET2SK2518-01MRFAP-IIA Series 200V 0,13 20A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Eq

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2515SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2515 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 9 m (VGS = 10 V, ID = 25 A)RDS (on)2 = 14 m

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2511SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2511 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 27 m (VGS = 10 V, ID = 20 A)RDS (on)2 = 40 m

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2512SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2512 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on)1 = 15 m (VGS = 10 V, ID = 23 A)RDS (on)2 = 23 m (V

N-channel MOS-FET2SK2519-01FAP-II Series 200V 0,4 10A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2510SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2510 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.FEATURES10.00.3 4.50.23.20.2 Super Low On-Resistance2.70.2RDS (on)1 = 20 m (VGS = 10 V, ID = 20 A)RDS (on)2 = 30 m

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2514SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2514 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 15 m (VGS = 10 V, ID = 25 A)RDS (on)2 23

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2513, 2SK2513-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Tran-(in millimeters)sistor designed for high current switching applications.10.6 MAX. 4.8 MAX.FEATURES3.6 0.21.3 0.210.0 Low On-ResistanceRDS(on)1 = 15 m (VGS = 10 V,