APT5016BLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT5016BLLG
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 329 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de APT5016BLLG MOSFET
APT5016BLLG datasheet
apt5016bllg.pdf
APT5016BLL APT5016SLL 500V 30A 0.160 R POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with excep
apt5016bll.pdf
APT5016BLL APT5016SLL 500V 30A 0.160W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
apt5016bll.pdf
isc N-Channel MOSFET Transistor APT5016BLL FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
apt5016bfllg apt5016sfllg.pdf
APT5016BFLL APT5016SFLL 500V 30A 0.160 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with e
Otros transistores... 2SK1982-01MR , BUK457-400A , BUK457-400B , 2SK125 , 2SJ410 , 2SK2518-01MR , 2SK4027 , APT5016BFLLG , IRFB31N20D , APT5016SFLLG , APT5017SVFRG , APT5018BFLLG , APT5018SFLLG , APT5018SLL , APT5022BN , APT5024BLL , APT5024BLLG .
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