APT5018SLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT5018SLL
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 27 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 546 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: D3PAK
Búsqueda de reemplazo de APT5018SLL MOSFET
- Selecciónⓘ de transistores por parámetros
APT5018SLL datasheet
apt5018sll.pdf
APT5018BLL APT5018SLL 500V 27A 0.180 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along
apt5018bfllg apt5018sfllg.pdf
APT5018BFLL APT5018SFLL 500V 27A 0.180 BLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL al
apt5018bfll.pdf
APT5018BFLL APT5018SFLL 500V 27A 0.180W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast
apt5018bll.pdf
APT5018BLL APT5018SLL 500V 27A 0.180W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
Otros transistores... 2SK2518-01MR , 2SK4027 , APT5016BFLLG , APT5016BLLG , APT5016SFLLG , APT5017SVFRG , APT5018BFLLG , APT5018SFLLG , IRFZ46N , APT5022BN , APT5024BLL , APT5024BLLG , APT5024SFLL , APT5024SFLLG , APT5024SLL , APT5024SVFRG , APT5025AN .
History: AS2304 | SUP75N06-08 | OSG60R074HZF | R6004ENJ | XP162A12A6PR-G | SUD50N10-34P | 2SK2607
History: AS2304 | SUP75N06-08 | OSG60R074HZF | R6004ENJ | XP162A12A6PR-G | SUD50N10-34P | 2SK2607
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