2SK1272
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1272
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.75
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 1
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35
nS
Cossⓘ - Capacitancia
de salida: 105
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65
Ohm
Paquete / Cubierta:
TO92
- Selección de transistores por parámetros
2SK1272
Datasheet (PDF)
8.4. Size:200K fuji
2sk1279.pdf 
N-channel MOS-FET2SK1279F-V Series 500V 0,58 15A 125W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500
8.5. Size:189K fuji
2sk1278.pdf
N-channel MOS-FET2SK1278F-V Series 500V 1,1 10A 100W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500 V
8.6. Size:206K fuji
2sk1277.pdf
N-channel MOS-FET2SK1277F-V Series 250V 0,12 30A 150W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 250
8.9. Size:1350K kexin
2sk1273.pdf
SMD Type MOSFETN-Channel MOSFET2SK12731.70 0.1 Features VDS (V) = 60V ID = 2 A 0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 0.65 (VGS = 10V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 2A Pulse
8.10. Size:203K inchange semiconductor
2sk1279.pdf
isc N-Channel MOSFET Transistor 2SK1279DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
8.11. Size:203K inchange semiconductor
2sk1278.pdf
isc N-Channel MOSFET Transistor 2SK1278DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
8.12. Size:203K inchange semiconductor
2sk1277.pdf
isc N-Channel MOSFET Transistor 2SK1277DESCRIPTIONDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V =0)
Otros transistores... 2SK1188
, 2SK1189
, 2SK1190
, 2SK1191
, 2SK1192
, 2SK1198
, 2SK1221
, 2SK1271
, IRLB4132
, 2SK1273
, 2SK1274
, 2SK1282
, 2SK1283
, 2SK1284
, 2SK1285
, 2SK1286
, 2SK1287
.
History: QM6204S
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