APT50M75B2FLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50M75B2FLLG
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 570 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 57 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Encapsulados: TO-247
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APT50M75B2FLLG datasheet
apt50m75b2fllg apt50m75lfllg.pdf
APT50M75B2FLL APT50M75LFLL 500V 57A 0.075 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses
apt50m75b2fll.pdf
APT50M75B2FLL APT50M75LFLL 500V 57A 0.075W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio
apt50m75b2fll.pdf
isc N-Channel MOSFET Transistor APT50M75B2FLL FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
apt50m75b2ll.pdf
APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s
Otros transistores... APT50M50L2LLG , APT50M60JVFR , APT50M60JVR , APT50M60L2VFRG , APT50M60L2VRG , APT50M65B2LLG , APT50M65LFLL , APT50M65LLLG , IRF540 , APT50M75B2LLG , APT50M75LFLLG , APT50M75LLLG , APT50M80B2VFRG , APT50M80B2VRG , APT50M80LVFRG , APT50M80LVRG , APT50M85B2VFRG .
History: CRSD082N10L2 | AP3A010MT | ASDM3404ZA | DMP4015SPSQ | SUM110N03-03P | SK2300A | 2SK1081-01
History: CRSD082N10L2 | AP3A010MT | ASDM3404ZA | DMP4015SPSQ | SUM110N03-03P | SK2300A | 2SK1081-01
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