APT50M80B2VRG Todos los transistores

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 apt50m80b2vrg apt50m80lvrg.pdf

APT50M80B2VR APT50M80LVR 500V 58A 0.080 POWER MOS V TM T-Max Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Identical

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 apt50m80b2vr.pdf

APT50M80B2VR APT50M80LVR 500V 58A 0.080W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio

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 apt50m80b2vfr.pdf

APT50M80B2VFR 500V 58A 0.080W POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

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 apt50m80b2vfrg apt50m80lvfrg.pdf

APT50M80B2VFR APT50M80LVFR 500V 58A 0.080 POWER MOS V FREDFET TM T-Max Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

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 apt50m80b2vfr.pdf

isc N-Channel MOSFET Transistor APT50M80B2VFR FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.08 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p