APT53N60BC6 Todos los transistores

 

APT53N60BC6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT53N60BC6
   Tipo de FET: MOFETS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 417 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 53 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 154 nC
   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 3545 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO-247
 

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APT53N60BC6 Datasheet (PDF)

 ..1. Size:149K  microsemi
 apt53n60bc6 apt53n60sc6.pdf pdf_icon

APT53N60BC6

APT53N60BC6 APT53N60SC6 600V 53A 0.070 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedD Popular TO-247 or Surface Mount D3 package.GSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parame

 ..2. Size:376K  inchange semiconductor
 apt53n60bc6.pdf pdf_icon

APT53N60BC6

isc N-Channel MOSFET Transistor APT53N60BC6FEATURESDrain Current I =53A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:210K  microsemi
 apt53f80j.pdf pdf_icon

APT53N60BC6

APT53F80J 800V, 57A, 0.11 Max, trr 470nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high

Otros transistores... APT50M80LVRG , APT50M85B2VFRG , APT50M85LVFRG , APT50M85LVR , APT50N60JCCU2 , APT51F50J , APT51M50J , APT53F80J , IRFP250N , APT53N60SC6 , APT5570AN , APT56F50B2 , APT56F50L , APT56F60B2 , APT56F60L , APT56M50B2 , APT56M50L .

 

 
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