APT6010LFLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6010LFLLG
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 690 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 54 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO-264
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APT6010LFLLG PDF Specs
apt6010b2fllg apt6010lfllg.pdf
600V 54A 0.100 APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2FLL POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering ... See More ⇒
apt6010lfll.pdf
isc N-Channel MOSFET Transistor APT6010LFLL FEATURES Drain Current I = 54A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
apt6010b2llg apt6010lllg.pdf
600V 54A 0.100 APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(O... See More ⇒
apt6010b2ll.pdf
APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi... See More ⇒
Otros transistores... APT58F50J , APT58M50J , APT58M50JCU2 , APT58M50JCU3 , APT58M80J , APT5F100K , APT6010B2FLLG , APT6010B2LLG , SPP20N60C3 , APT6010LLLG , APT6011B2VFRG , APT6011LVFRG , APT6013B2FLLG , APT6013B2LLG , APT6013LFLLG , APT6013LLLG , APT6015B2VFRG .
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