APT6013LLLG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6013LLLG 📄📄
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 565 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 43 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 1060 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: TO-264
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APT6013LLLG datasheet
apt6013b2llg apt6013lllg.pdf
APT6013B2LL APT6013LLL 600V 43A 0.130 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL
apt6013b2fllg apt6013lfllg.pdf
APT6013B2FLL APT6013LFLL 600V 43A 0.130 B2FLL R POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L
apt6013lfll.pdf
isc N-Channel MOSFET Transistor APT6013LFLL FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
apt6013b2fll.pdf
APT6013B2FLL APT6013LFLL 600V 43A 0.130W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona
Otros transistores... APT6010B2LLG, APT6010LFLLG, APT6010LLLG, APT6011B2VFRG, APT6011LVFRG, APT6013B2FLLG, APT6013B2LLG, APT6013LFLLG, IRFB3607, APT6015B2VFRG, APT6015JVFR, APT6015LVFRG, APT6017B2FLLG, APT6017B2LLG, APT6017LFLLG, APT6017LLLG, APT6018JN
Parámetros del MOSFET. Cómo se afectan entre sí.
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