APT6013LLLG Todos los transistores

 

APT6013LLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT6013LLLG
   Tipo de FET: MOFETS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 565 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 43 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 1060 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: TO-264
 

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APT6013LLLG PDF Specs

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APT6013LLLG

APT6013B2LL APT6013LLL 600V 43A 0.130 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL ... See More ⇒

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APT6013LLLG

APT6013B2FLL APT6013LFLL 600V 43A 0.130 B2FLL R POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L... See More ⇒

 6.2. Size:255K  inchange semiconductor
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APT6013LLLG

isc N-Channel MOSFET Transistor APT6013LFLL FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 7.1. Size:70K  apt
apt6013b2fll.pdf pdf_icon

APT6013LLLG

APT6013B2FLL APT6013LFLL 600V 43A 0.130W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona... See More ⇒

Otros transistores... APT6010B2LLG , APT6010LFLLG , APT6010LLLG , APT6011B2VFRG , APT6011LVFRG , APT6013B2FLLG , APT6013B2LLG , APT6013LFLLG , IRF1010E , APT6015B2VFRG , APT6015JVFR , APT6015LVFRG , APT6017B2FLLG , APT6017B2LLG , APT6017LFLLG , APT6017LLLG , APT6018JN .

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