APT6021BFLLG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6021BFLLG 📄📄
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 400 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 29 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 635 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
Encapsulados: TO-247
📄📄 Copiar
Búsqueda de reemplazo de APT6021BFLLG MOSFET
- Selecciónⓘ de transistores por parámetros
APT6021BFLLG datasheet
apt6021bfllg apt6021sfllg.pdf
APT6021BFLL APT6021SFLL 600V 29A 0.210 R BFLL POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
apt6021bfll.pdf
APT6021BFLL APT6021SFLL 600V 29A 0.210W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas
apt6021bfll.pdf
isc N-Channel MOSFET Transistor APT6021BFLL FEATURES Drain Current I =29A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.21 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt6021bllg.pdf
APT6021BLL APT6021SLL 600V 29A 0.210 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along
Otros transistores... APT6015B2VFRG, APT6015JVFR, APT6015LVFRG, APT6017B2FLLG, APT6017B2LLG, APT6017LFLLG, APT6017LLLG, APT6018JN, STP80NF70, APT6021BLLG, APT6021SFLLG, APT6025BFLLG, APT6025BLLG, APT6025BVFRG, APT6025BVRG, APT6025SFLLG, APT6025SVFRG
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SML4040CN | IRFI530NPBF | G80N06
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D | MSQ30P15 | MSQ30P07D | MSQ100N03D | MSHM60P14 | MSHM40N085 | MSHM30N46
Popular searches
c815 transistor | ksa1381 equivalent | 2sa1306 | b817 transistor | 2n3394 | 2sb688 | 2sd551 | ac128 datasheet
