APT6025BVFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6025BVFRG
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 370 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 525 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de APT6025BVFRG MOSFET
APT6025BVFRG Datasheet (PDF)
apt6025bvfrg apt6025svfrg.pdf

APT6025BVFRAPT6025SVFR600V 25A 0.250POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Re
apt6025bvfr.pdf

APT6025BVFR600V 25A 0.250POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
apt6025bvfr.pdf

isc N-Channel MOSFET Transistor APT6025BVFRFEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt6025bvrg.pdf

APT6025BVR600V 25A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
Otros transistores... APT6017LFLLG , APT6017LLLG , APT6018JN , APT6021BFLLG , APT6021BLLG , APT6021SFLLG , APT6025BFLLG , APT6025BLLG , P0903BDG , APT6025BVRG , APT6025SFLLG , APT6025SVFRG , APT6029BFLLG , APT6029SFLLG , APT6029SLL , APT6029SLLG , APT6033BN .
History: 12N80G-TF1-T | IRFU120NPBF | HM3018JR | HGK105N15M | 2SK3530-01MR | TSM3N80CH | GSM1413
History: 12N80G-TF1-T | IRFU120NPBF | HM3018JR | HGK105N15M | 2SK3530-01MR | TSM3N80CH | GSM1413



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