APT6025BVFRG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6025BVFRG  📄📄 

Tipo de FET: MOFETS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 370 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 525 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: TO-247

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APT6025BVFRG datasheet

 ..1. Size:116K  apt
 apt6025bvfrg apt6025svfrg.pdf pdf_icon

APT6025BVFRG

APT6025BVFR APT6025SVFR 600V 25A 0.250 POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Re

 3.1. Size:72K  apt
 apt6025bvfr.pdf pdf_icon

APT6025BVFRG

APT6025BVFR 600V 25A 0.250 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 3.2. Size:375K  inchange semiconductor
 apt6025bvfr.pdf pdf_icon

APT6025BVFRG

isc N-Channel MOSFET Transistor APT6025BVFR FEATURES Drain Current I =25A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 5.1. Size:49K  apt
 apt6025bvrg.pdf pdf_icon

APT6025BVFRG

APT6025BVR 600V 25A 0.250 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

MOSTRAR MÁS

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