RFD14N05L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFD14N05L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 185 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: TO251AA
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RFD14N05L datasheet
rfd14n05l rfd14n05lsm rfp14n05l.pdf
RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utili
rfd14n05l rfd14n05lsm.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
rfd14n05lsm.pdf
RFD14N05LSM www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mo
rfd14n05sm9a.pdf
RFD14N05, RFD14N05SM Data Sheet February 2004 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti
Otros transistores... RF1S9630SM, RF1S9640SM, RFB18N10CS, RFD10P03L, RFD10P03LSM, RFD12N06RLE, RFD12N06RLESM, RFD14N05, IRF9640, RFD14N05LSM, RFD14N05SM, RFD14N06L, RFD14N06LSM, RFD15N06LE, RFD15N06LESM, RFD15P05, RFD15P06
History: CS10N60A8HD | NCE65T360I
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