APT6035BVFRG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6035BVFRG  📄📄 

Tipo de FET: MOFETS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 403 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO-247

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APT6035BVFRG datasheet

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 apt6035bvfrg apt6035svfrg.pdf pdf_icon

APT6035BVFRG

APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR

 3.1. Size:116K  apt
 apt6035bvfr.pdf pdf_icon

APT6035BVFRG

APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR

 5.1. Size:62K  apt
 apt6035bvr.pdf pdf_icon

APT6035BVFRG

APT6035BVR 600V 18A 0.350 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 5.2. Size:376K  inchange semiconductor
 apt6035bvr.pdf pdf_icon

APT6035BVFRG

isc N-Channel MOSFET Transistor APT6035BVR FEATURES Drain Current I =18A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.35 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

MOSTRAR MÁS

Otros transistores... APT6025BVRG, APT6025SFLLG, APT6025SVFRG, APT6029BFLLG, APT6029SFLLG, APT6029SLL, APT6029SLLG, APT6033BN, K3569, APT6035SVFRG, APT6038BFLLG, APT6038BLLG, APT6038SFLLG, APT6038SLLG, APT6040SVFR, APT6040SVR, APT6045BN