APT7F100B Todos los transistores

 

APT7F100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT7F100B
   Tipo de FET: MOFETS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 290 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 158 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: TO-247
     - Selección de transistores por parámetros

 

APT7F100B Datasheet (PDF)

 ..1. Size:382K  microsemi
 apt7f100b apt7f100s.pdf pdf_icon

APT7F100B

APT7F100B APT7F100S 1000V, 7A, 2.0 MaxN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge,

 8.1. Size:238K  microsemi
 apt7f120b apt7f120s.pdf pdf_icon

APT7F100B

APT7F120B APT7F120S 1200V, 7A, 2.4 Max, trr 190nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

 9.1. Size:211K  microsemi
 apt7f80k.pdf pdf_icon

APT7F100B

APT7F80K 800V, 7A, 1.50 MAX,TRR 160nSN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high g

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History: PHP3N40E | GSM2341 | RRL025P03 | ITF87072DK8T | FQB7N80TMAM002 | BSS123A | WPM2026

 

 
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