RFD14N06LSM Todos los transistores

 

RFD14N06LSM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RFD14N06LSM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO252AA
     - Selección de transistores por parámetros

 

RFD14N06LSM Datasheet (PDF)

 5.1. Size:83K  intersil
rfd14n06l-sm rfp14n06l.pdf pdf_icon

RFD14N06LSM

RFD14N06L, RFD14N06LSM, RFP14N06LData Sheet July 1999 File Number 4088.314A, 60V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, giveso

 7.1. Size:207K  fairchild semi
rfd14n05l rfd14n05lsm rfp14n05l.pdf pdf_icon

RFD14N06LSM

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili

 7.2. Size:219K  fairchild semi
rfd14n05sm9a.pdf pdf_icon

RFD14N06LSM

RFD14N05, RFD14N05SMData Sheet February 200414A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti

 7.3. Size:381K  fairchild semi
rfd14n05-sm rfp14n05.pdf pdf_icon

RFD14N06LSM

RFD14N05, RFD14N05SM, RFP14N05Data Sheet January 200214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon

Otros transistores... RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 , RFD14N05L , RFD14N05LSM , RFD14N05SM , RFD14N06L , IRFP064N , RFD15N06LE , RFD15N06LESM , RFD15P05 , RFD15P06 , RFD15P06SM , RFD16N03L , RFD16N03LSM , RFD16N05 .

History: ZVN3310F | VS3620DP-G | SHD226309 | 2SJ152 | SDF07N80 | NTMFS4925NT1G

 

 
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