APT8018L2VFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT8018L2VFRG
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 833 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 43 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 1180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-264MAX
Búsqueda de reemplazo de MOSFET APT8018L2VFRG
APT8018L2VFRG Datasheet (PDF)
apt8018l2vfrg.pdf
APT8018L2VFR800V 43A 0.180L2VFR POWER MOS V FREDFETTO-264Power MOS V is a new generation of high voltage N-Channel enhancementMaxmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa
apt8018l2vfr.pdf
APT8018L2VFR800V 43A 0.180L2VFR POWER MOS V FREDFETTO-264Power MOS V is a new generation of high voltage N-Channel enhancementMaxmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa
apt8018l2vr.pdf
APT8018L2VR800V 43A 0.180WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD
apt8018jn.pdf
DGAPT8018JN 800V 40A 0.18S"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 8018JN UNITVDSS Drain-Source Voltage800 VoltsID Continuous Drain Current @ TC = 25C40AmpsIDM, lLM Pulsed D
apt8018.pdf
APT8018L2VR800V 43A 0.180WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918