APT8090AN Datasheet. Equivalente

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 apt7575an apt7590an apt8075an apt8090an.pdf

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 apt7575bn apt7590bn apt8090bn.pdf

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 apt8024b2fll.pdf

APT8024B2FLL APT8024LFLL 800V 31A 0.240W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

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 apt8020b2ll.pdf

APT8020B2LL APT8020LLL 800V 38A 0.200W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

 9.3. Size:156K  apt
 apt8052bllg.pdf

APT8052BLL APT8052SLL 800V 15A 0.520 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) SLL and Qg. Power MOS 7 combines lower conduction and switching losses along

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 apt8011jfll.pdf

APT8011JFLL 800V 51A 0.110W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

 9.5. Size:52K  apt
 apt8075bvfrg.pdf

APT8075BVFR 800V 12A 0.750 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

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 apt8011jll.pdf

APT8011JLL 800V 51A 0.110W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

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 apt8030lvfr.pdf

APT8030LVFR 800V 27A 0.300 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

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 apt8030lvr.pdf

APT8030LVR 800V 27A 0.300 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

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 apt8065svr.pdf

APT8065SVR 800V 13A 0.650 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

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 apt8024b2vfr.pdf

APT8024B2VFR APT8024LVFR 800V 33A 0.240W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical Sp

 9.11. Size:71K  apt
 apt8020b2fll.pdf

APT8020B2FLL APT8020LFLL 800V 38A 0.200W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

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 apt8014jfll.pdf

APT8014JFLL 800V 42A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

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 apt8035jn.pdf

D G APT8030JN 800V 27.0A 0.30 S APT8035JN 800V 25.0A 0.35 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 8030JN 8035JN UNIT VDSS Drain-Source Voltage 800 800 Volts ID Continuous Drain Cu

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 apt8024b2llg apt8024lllg.pdf

APT8024B2LL APT8024LLL 800V 31A 0.240 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

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 apt8028jvr.pdf

APT8028JVR 800V 28A 0.280 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

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 apt8018l2vfrg.pdf

APT8018L2VFR 800V 43A 0.180 L2VFR POWER MOS V FREDFET TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa

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 apt8024jll.pdf

APT8024JLL 800V 29A 0.240W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

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 apt802r4kn.pdf

Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003

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 apt80gp60jdq3.pdf

TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 600V APT80GP60JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Lo

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 apt8020b2llg apt8020lllg.pdf

APT8020B2LL APT8020LLL 800V 38A 0.200 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) LLL and Qg. Power MOS 7 combines lower conduction and switching losses

 9.21. Size:60K  apt
 apt8065avr.pdf

APT8065AVR 800V 11.5A 0.650 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.22. Size:69K  apt
 apt8024b2ll.pdf

APT8024B2LL APT8024LLL 800V 31A 0.240W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

 9.23. Size:160K  apt
 apt8043sll.pdf

APT8043BLL APT8043SLL 800V 20A 0.430 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) SLL and Qg. Power MOS 7 combines lower conduction and switching losses along

 9.24. Size:70K  apt
 apt8011.pdf

APT8011JFLL 800V 51A 0.110W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

 9.25. Size:61K  apt
 apt8030jn.pdf

D G APT8030JN 800V 27.0A 0.30 S APT8035JN 800V 25.0A 0.35 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 8030JN 8035JN UNIT VDSS Drain-Source Voltage 800 800 Volts ID Continuous Drain Cu

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 apt8067hvr.pdf

APT8067HVR 800V 11.5A 0.670 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

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 apt8052bll.pdf

APT8052BLL APT8052SLL 800V 15A 0.520W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

 9.28. Size:70K  apt
 apt8020jfll.pdf

APT8020JFLL 800V 33A 0.200W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

 9.29. Size:63K  apt
 apt8065bvfr.pdf

APT8065BVFR 800V 13A 0.650 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

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 apt8030b2vr.pdf

APT8030B2VR 800V 27A 0.300 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 9.31. Size:69K  apt
 apt8043bll.pdf

APT8043BLL APT8043SLL 800V 20A 0.430W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

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 apt8030b2vfr.pdf

APT8030B2VFR 800V 27A 0.300 POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche

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 apt8018l2vr.pdf

APT8018L2VR 800V 43A 0.180W POWER MOS V TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche Tested D

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 apt8015.pdf

APT8015JVR 800V 44A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

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 apt80gp60jdf3.pdf

TYPICAL PERFORMANCE CURVES APT80GP60JDF3 APT80GP60JDF3 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" Low Conduction Loss 100 kHz ope

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 apt8075.pdf

D TO-247 G APT8075BN 800V 13.0A 0.75 S APT8090BN 800V 12.0A 0.90 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 8075BN 8090BN UNIT VDSS Drain-Source Voltage 800 800 Volts ID Continuous Drain Current @ TC = 25 C 13 12 Amps IDM Pulsed Drain Current 1 56 48 V

 9.37. Size:75K  apt
 apt8015jvr.pdf

APT8015JVR 800V 44A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

 9.38. Size:60K  apt
 apt8065.pdf

APT8065AVR 800V 11.5A 0.650 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 9.39. Size:69K  apt
 apt8020jll.pdf

APT8020JLL 800V 33A 0.200W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

 9.40. Size:60K  apt
 apt8018jn.pdf

D G APT8018JN 800V 40A 0.18 S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 8018JN UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25 C 40 Amps IDM, lLM Pulsed D

 9.41. Size:63K  apt
 apt8056bvfr.pdf

APT8056BVFR 800V 16A 0.560 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 9.42. Size:61K  apt
 apt8056bvr.pdf

APT8056BVR 800V 16A 0.560 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

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 apt8030jvfr.pdf

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 apt8024b2vfrg apt8024lvfrg.pdf

APT8024B2VFR APT8024LVFR 800V 33A 0.240 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 9.45. Size:60K  apt
 apt8030.pdf

APT8030B2VFR 800V 27A 0.300 POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche

 9.46. Size:99K  apt
 apt80gp60j.pdf

APT80GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" Low Conduction Loss 100 kHz operation @ 400V, 39A ISOTOP C Low Gate

 9.47. Size:60K  apt
 apt8065bvr.pdf

APT8065BVR 800V 13A 0.650 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 9.48. Size:78K  apt
 apt8015jvfr.pdf

 9.49. Size:37K  apt
 apt8024b2vr.pdf

APT8024B2VR APT8024LVR 800V 33A 0.240W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifications

 9.50. Size:77K  apt
 apt8018.pdf

APT8018L2VR 800V 43A 0.180W POWER MOS V TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche Tested D

 9.51. Size:91K  apt
 apt80gp60b2.pdf

 9.52. Size:50K  apt
 apt8075bn.pdf

D TO-247 G APT8075BN 800V 13.0A 0.75 S APT8090BN 800V 12.0A 0.90 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 8075BN 8090BN UNIT VDSS Drain-Source Voltage 800 800 Volts ID Continuous Drain Current @ TC = 25 C 13 12 Amps IDM Pulsed Drain Current 1 56 48 V

 9.53. Size:157K  apt
 apt8052bfllg apt8052sfllg.pdf

APT8052BFLL APT8052SFLL 800V 15A 0.520 R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL

 9.54. Size:62K  apt
 apt8075bvr.pdf

APT8075BVR 800V 12A 0.750 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 9.55. Size:60K  apt
 apt8058hvr.pdf

APT8058HVR 800V 13.5A 0.580 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 9.56. Size:70K  apt
 apt8024jfll.pdf

APT8024JFLL 800V 29A 0.240W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

 9.57. Size:71K  apt
 apt8043bfll.pdf

APT8043BFLL APT8043SFLL 800V 20A 0.430W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

 9.58. Size:65K  apt
 apt8014l2fll.pdf

APT8014L2FLL 800V 52A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

 9.59. Size:69K  apt
 apt8014jll.pdf

APT8014JLL 800V 42A 0.140W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

 9.60. Size:64K  apt
 apt8014l2ll.pdf

APT8014L2LL 800V 52A 0.140W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent w

 9.61. Size:72K  apt
 apt8075bvfr.pdf

APT8075BVFR 800V 12A 0.750 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 9.62. Size:92K  apt
 apt80gp60b2g.pdf

 9.63. Size:131K  apt
 apt8018l2vfr.pdf

APT8018L2VFR 800V 43A 0.180 L2VFR POWER MOS V FREDFET TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa

 9.64. Size:160K  apt
 apt8043bfllg apt8043sfllg.pdf

APT8043BFLL APT8043SFLL 800V 20A 0.430 R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL

 9.65. Size:71K  apt
 apt8052bfll.pdf

APT8052BFLL APT8052SFLL 800V 15A 0.520W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

 9.66. Size:67K  apt
 apt8030jvr.pdf

APT8030JVR 800V 25A 0.300 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

 9.67. Size:162K  microsemi
 apt80ga60ld40.pdf

APT80GA60B2D40 APT80GA60LD40 600V APT80GA60B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

 9.68. Size:245K  microsemi
 apt8024b2fllg apt8024lfllg.pdf

APT8024B2FLL APT8024LFLL 800V 31A 0.260 R B2FLL POWER MOS 7 FREDFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses a

 9.69. Size:215K  microsemi
 apt80ga60s.pdf

APT80GA60B APT80GA60S 600V High Speed PT IGBT APT80GA60B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 9.70. Size:215K  microsemi
 apt80ga60b.pdf

APT80GA60B APT80GA60S 600V High Speed PT IGBT APT80GA60B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 9.71. Size:242K  microsemi
 apt8014l2fllg.pdf

800V 52A 0.16 APT8014L2FLL APT8014L2FLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R POWER MOS 7 FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combine

 9.72. Size:251K  microsemi
 apt8020b2fllg apt8020lfllg.pdf

APT8020B2FLL APT8020LFLL 800V 38A 0.220 R B2FLL POWER MOS 7 FREDFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) LFLL and Qg. Power MOS 7 combines lower conduction and switching los

 9.73. Size:164K  microsemi
 apt80m60j.pdf

APT80M60J 600V, 84A, 0.055 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon g

 9.74. Size:247K  microsemi
 apt80ga90ld40.pdf

APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunit

 9.75. Size:202K  microsemi
 apt80ga90b apt80ga90s.pdf

APT80GA90B APT80GA90S 900V High Speed PT IGBT APT80GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 9.76. Size:215K  microsemi
 apt80f60j.pdf

APT80F60J 600V, 84A, 0.055 Max, trr 370ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig

 9.77. Size:376K  inchange semiconductor
 apt8052bll.pdf

isc N-Channel MOSFET Transistor APT8052BLL FEATURES Drain Current I =15A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.52 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.78. Size:376K  inchange semiconductor
 apt8065bvfr.pdf

isc N-Channel MOSFET Transistor APT8065BVFR FEATURES Drain Current I =13A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.79. Size:376K  inchange semiconductor
 apt8043bll.pdf

isc N-Channel MOSFET Transistor APT8043BLL FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.80. Size:376K  inchange semiconductor
 apt8056bvr.pdf

isc N-Channel MOSFET Transistor APT8056BVR FEATURES Drain Current I =16A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.81. Size:376K  inchange semiconductor
 apt8065bvr.pdf

isc N-Channel MOSFET Transistor APT8065BVR FEATURES Drain Current I =13A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.82. Size:376K  inchange semiconductor
 apt8075bvr.pdf

isc N-Channel MOSFET Transistor APT8075BVR FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.83. Size:376K  inchange semiconductor
 apt8043bfll.pdf

isc N-Channel MOSFET Transistor APT8043BFLL FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.84. Size:376K  inchange semiconductor
 apt8052bfll.pdf

isc N-Channel MOSFET Transistor APT8052BFLL FEATURES Drain Current I =15A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.52 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp