APT94N65B2C3G Todos los transistores

 

APT94N65B2C3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT94N65B2C3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 833 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 94 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 5200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO-247
 

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APT94N65B2C3G Datasheet (PDF)

 ..1. Size:145K  microsemi
 apt94n65b2c3g.pdf pdf_icon

APT94N65B2C3G

650V 94A APT94N65B2C3 APT94N65B2C3G**G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOSPower Semiconductors Super Junction MOSFET T-MaxTM Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel)G Popular T-MAX PackageSUnless stated otherwise, Microsemi di

 3.1. Size:159K  microsemi
 apt94n65b2c6 apt94n65lc6.pdf pdf_icon

APT94N65B2C3G

APT94N65B2C6 APT94N65LC6 650V 94A 0.035APT94N65B2C6Super Junction MOSFET T-MaxTO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT94N65LC6 Extreme dv/dt RatedDGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made withStwo parallel MOSFET die. I

 7.1. Size:168K  apt
 apt94n60l2c3.pdf pdf_icon

APT94N65B2C3G

APT94N60L2C3600V 94A 0.035Super Junction MOSFETTO-264MaxCOOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, QgG Avalanche Energy Rated TO-264 Max PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT94N60L2C3 UNITVDSS Drain-Source Voltage60

 7.2. Size:250K  microsemi
 apt94n60l2c3g.pdf pdf_icon

APT94N65B2C3G

APT94N60L2C3600V 94A 0.035Super Junction MOSFETTO-264MaxCOOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, QgD Avalanche Energy Rated TO-264 Max PackageGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made withStwo parallel MOSFET die. It

MOSTRAR MÁS

Otros transistores... APT901RBN , APT902R4BN , APT902RBN , APT904R2AN , APT904R2BN , APT904RAN , APT904RBN , APT94N60L2C3G , 18N50 , APT94N65B2C6 , APT94N65LC6 , APT97N65B2C6 , APT97N65LC6 , APT9F100B , APT9F100S , APT9M100B , APT9M100S .

History: PTA13N60 | APQ4ESN50A | AP65SL380AI | 2SK2136 | NCE65T180D | SWB13N65K2 | STB155N3LH6

 

 
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