APTC60DDAM45CT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APTC60DDAM45CT1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 8500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: MODULE

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APTC60DDAM45CT1G datasheet

 0.1. Size:250K  microsemi
aptc60ddam45ct1g.pdf pdf_icon

APTC60DDAM45CT1G

APTC60DDAM45CT1G VDSS = 600V Dual boost chopper RDSon = 45m max @ Tj = 25 C Super Junction MOSFET ID = 49A @ Tc = 25 C Power Module Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged S

 4.1. Size:249K  microsemi
aptc60ddam70ct1g.pdf pdf_icon

APTC60DDAM45CT1G

 7.1. Size:249K  microsemi
aptc60dam24ct1g.pdf pdf_icon

APTC60DDAM45CT1G

APTC60DAM24CT1G VDSS = 600V Boost chopper RDSon = 24m max @ Tj = 25 C Super Junction MOSFET ID = 95A @ Tc = 25 C Power Module Application AC and DC motor control 5 6 11 Switched Mode Power Supplies Power Factor Correction Features CR1 - Ultra low RDSon 3 NTC - Low Miller capacitance 4 Q2 - Ultra low gate charge - Avalanche energy rated

 7.2. Size:311K  microsemi
aptc60dam18ctg.pdf pdf_icon

APTC60DDAM45CT1G

APTC60DAM18CTG Boost chopper VDSS = 600V SiC FWD diode RDSon = 18m max @ Tj = 25 C Super Junction ID = 143A @ Tc = 25 C MOSFET Power Module Application AC and DC motor control VBUS NTC2 Switched Mode Power Supplies VBUS SENSE Power Factor Correction CR1 Features - Ultra low RDSon OUT - Low Miller capacitance Q2 - Ultra low gate charge -

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