RFD16N03LSM Todos los transistores

 5.1. Size:91K  harris semi
 rfd16n03l-sm.pdf

RFD16N03L, S E M I C O N D U C T O R RFD16N03LSM 16A, 30V, Avalanche Rated N-Channel Logic Level December 1995 Enhancement-Mode Power MOSFETs Features Packaging JEDEC TO-251AA 16A, 30V SOURCE rDS(ON) = 0.022 DRAIN GATE Temperature Compensating PSPICE Model DRAIN (FLANGE) Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width C

 7.1. Size:189K  1
 rfd16n06le rfd16n06lesm.pdf

 7.2. Size:161K  fairchild semi
 rfd16n05l-lsm.pdf

RFD16N05L, RFD16N05LSM Data Sheet December 2003 16A, 50V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFETs 16A, 50V These are N-Channel logic level power MOSFETs rDS(ON) = 0.047 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati

 7.3. Size:228K  fairchild semi
 rfd16n05-sm.pdf

RFD16N05, RFD16N05SM Data Sheet November 2003 16A, 50V, 0.047 Ohm, N-Channel Power Features MOSFETs 16A, 50V The RFD16N05 and RFD16N05SM N-channel power rDS(ON) = 0.047 MOSFETs are manufactured using the MegaFET process. Temperature Compensating PSPICE Model This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati

 7.4. Size:193K  fairchild semi
 rfd16n06lesm.pdf

RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFETs 16A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 a modern process. This process, which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI integrated circuits gives optimum utilization of silicon, resu

 7.5. Size:691K  onsemi
 rfd16n05lsm.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.6. Size:806K  cn vbsemi
 rfd16n05lsm9a.pdf

RFD16N05LSM9A www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi

 7.7. Size:1347K  cn vbsemi
 rfd16n06le.pdf

RFD16N06LE www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no