APTM100H45SCTG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APTM100H45SCTG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 357 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 715 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm

Encapsulados: MODULE

  📄📄 Copiar 

 Búsqueda de reemplazo de APTM100H45SCTG MOSFET

- Selecciónⓘ de transistores por parámetros

 

APTM100H45SCTG datasheet

 ..1. Size:298K  microsemi
aptm100h45sctg.pdf pdf_icon

APTM100H45SCTG

APTM100H45SCTG Full bridge VDSS = 1000V RDSon = 450m typ @ Tj = 25 C Series & SiC parallel diodes ID = 18A @ Tc = 25 C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3A Features CR1B CR3B Power MOS 7 MOSFETs Q1 Q3 - Low RDSon G1 G3 - Low input and Miller capacitance OUT

 7.1. Size:264K  microsemi
aptm100um65scavg.pdf pdf_icon

APTM100H45SCTG

APTM100UM65SCAVG VDSS = 1000V Single switch RDSon = 65m typ @ Tj = 25 C Series & SiC parallel diodes ID = 145A @ Tc = 25 C MOSFET Power Module D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DK Features Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low g

 7.2. Size:197K  microsemi
aptm100da18ct1g.pdf pdf_icon

APTM100H45SCTG

APTM100DA18CT1G VDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 40A @ Tc = 25 C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3 NTC - Low RDSon 4 Q2 - Low input and Miller capacitance - Low gate charge

 7.3. Size:293K  microsemi
aptm100a23sctg.pdf pdf_icon

APTM100H45SCTG

APTM100A23SCTG VDSS = 1000V Phase leg RDSon = 230m typ @ Tj = 25 C Series & SiC parallel diodes ID = 36A @ Tc = 25 C MOSFET Power Module Application Motor control Switched Mode Power Supplies NTC2 Uninterruptible Power Supplies VBUS Features Q1 Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance G1 OUT - Low gate charge -

Otros transistores... APTC90AM60SCTG, APTC90DAM60CT1G, APTC90DDA12CT1G, APTC90H12SCTG, APTC90SKM60CT1G, APTM100A13SCG, APTM100A23SCTG, APTM100DA18CT1G, IRF520, APTM100UM65SCAVG, APTM120DA30CT1G, APTM120U10SCAVG, APTM50AM24SCG, APTM50AM38SCTG, APTM50DAM38CTG, APTM50HM75SCTG, ATP304