RFD16N05L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFD16N05L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm
Encapsulados: TO251AA
Búsqueda de reemplazo de RFD16N05L MOSFET
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RFD16N05L datasheet
rfd16n05l-lsm.pdf
RFD16N05L, RFD16N05LSM Data Sheet December 2003 16A, 50V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFETs 16A, 50V These are N-Channel logic level power MOSFETs rDS(ON) = 0.047 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati
rfd16n05lsm.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
rfd16n05lsm9a.pdf
RFD16N05LSM9A www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi
Otros transistores... RFD15N06LE, RFD15N06LESM, RFD15P05, RFD15P06, RFD15P06SM, RFD16N03L, RFD16N03LSM, RFD16N05, IRFZ44N, RFD16N05LSM, RFD16N05SM, RFD16N06LE, RFD16N06LESM, RFD3055, RFD3055LE, RFD3055LESM, RFD3055SM
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