AO4466L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO4466N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4466/L uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 9.4A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

AO446630V N-Channel MOSFETGeneral Description Product SummaryThe AO4466 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type MOSFETN-Channel MOSFETAO4466 (KO4466)SOP-8 Features VDS (V) = 30V ID = 9.4 A (VGS = 10V)1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate

AO446830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4468 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO4468 (KO4468)SOP-8 Features VDS (V) = 30V1.50 0.15 ID = 10.5 A (VGS = 10V) RDS(ON) 17m (VGS = 10V)1 Source 5 Drain RDS(ON) 23m (VGS = 4.5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat