AO4466L Todos los transistores

 ..1. Size:199K  aosemi
 ao4466l.pdf

AO4466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4466/L uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 9.4A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 8.1. Size:324K  aosemi
 ao4466.pdf

AO4466 30V N-Channel MOSFET General Description Product Summary The AO4466 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 8.2. Size:1389K  kexin
 ao4466.pdf

SMD Type MOSFET N-Channel MOSFET AO4466 (KO4466) SOP-8 Features VDS (V) = 30V ID = 9.4 A (VGS = 10V) 1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate

 9.1. Size:315K  aosemi
 ao4468.pdf

AO4468 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.2. Size:1303K  kexin
 ao4468.pdf

SMD Type MOSFET N-Channel MOSFET AO4468 (KO4468) SOP-8 Features VDS (V) = 30V 1.50 0.15 ID = 10.5 A (VGS = 10V) RDS(ON) 17m (VGS = 10V) 1 Source 5 Drain RDS(ON) 23m (VGS = 4.5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gat