AOD4144 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD4144
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 55 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 23 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 220 pF
Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET AOD4144
AOD4144 Datasheet (PDF)
aod4144.pdf
AOD4144N-Channel SDMOSTM Power TransistorGeneral Description FeaturesThe AOD4144 is fabricated with SDMOSTM trench VDS (V) =30Vtechnology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with (VGS = 10V)ID = 55Acontrolled switching behavior. This universal technology (VGS = 10V)RDS(ON)
aod4144.pdf
AOD4144www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOLUT
aod4146.pdf
AOD4146/AOI414630V N-Channel MOSFETTMSDMOSGeneral Description Product Summary30VThe AOD4146/AOI4146 is fabricated with SDMOSTM VDS ID (at VGS=10V) 55Atrench technology that combines excellent RDS(ON) with lowgate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
aod414.pdf
AOD414N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD414 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 85A (VGS = 10V)and body diode characteristics. This device is ideallyRDS(ON)
aod414.pdf
AOD414www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLU
aod4146.pdf
isc N-Channel MOSFET Transistor AOD4146FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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