RCJ081N20 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RCJ081N20 datasheet

..1. Size:437K rohm
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RCJ081N20 Nch 200V 8.0A Power MOSFET Datasheet lOutline (2) VDSS 200V LPT(S) (SC-83) RDS(on) (Max.) 770mW ID 8.0A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche

..2. Size:254K inchange semiconductor
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isc N-Channel MOSFET Transistor RCJ081N20 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.77 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

9.1. Size:439K rohm
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RCJ080N25 Nch 250V 8.0A Power MOSFET Datasheet lOutline (2) VDSS 250V LPT(S) (SC-83) RDS(on) (Max.) 600mW ID 8.0A (1) PD 35W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche t

Otros transistores... RCD040N25TL , RCD041N25 , RCD051N20 , RCD075N19 , RCD080N25TL , RCD100N19 , RCJ050N25 , RCJ080N25 , 7N65 , RCJ100N25 , RCJ120N20 , RCJ120N25 , RCJ160N20 , RCJ200N20 , RCJ220N25 , RCJ300N20 , RCJ510N25 .